RDS(on)cap R sub cap D cap S open paren o n close paren end-sub
): Generally around to 3.5A , depending on thermal management. Static Drain-Source On-Resistance ( me2401gn-rar
RDS(on)cap R sub cap D cap S open paren o n close paren end-sub ): Low resistance (often 4.5V4.5 cap V gate voltage) to minimize power loss. Efficiency: The low RDS(on)cap R sub cap D cap S open
Used in battery-operated devices and load switches. Based on standard industry documentation for the series:
Based on standard industry documentation for the series: Type: N-Channel MOSFET.
The is a high-performance, N-Channel logic-level enhancement mode field-effect transistor (MOSFET) commonly manufactured by Matsuki Electric. It is designed for high-density mounting in compact electronic devices, such as power management systems in laptops or DC-DC converters. Core Specifications
SOT-23 (Small Outline Transistor), which is ideal for space-constrained circuit boards. Drain-Source Voltage ( VDSScap V sub cap D cap S cap S end-sub ): Typically rated at 20V to 30V . Continuous Drain Current ( IDcap I sub cap D